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PolarHT TM
Power MOSFET
IXTQ 110N10P
IXTT 110N10P
V DSS
I D25
R DS(on)
= 100
= 110
≤ 15
V
A
m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-3P (IXTQ)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
100
100
V
V
V GS
V GSM
I D25
I D(RMS)
I DM
Continuous
Transient
T C = 25 ° C
External lead current limit
T C = 25 ° C, pulse width limited by T JM
± 20
± 30
110
75
250
V
V
A
A
A
G
D
S
(TAB)
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
60
40
1.0
A
mJ
J
TO-268 (IXTT)
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
10
480
-55 ... +175
175
-55 ... +150
V/ns
W
° C
° C
° C
G = Gate
S = Source
Features
G
S
D = Drain
TAB = Drain
D (TAB)
T L
T SOLD
M d
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
300 ° C
260 ° C
1.13/10 Nm/lb.in.
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Weight
TO-3P
TO-268
5.5
5.0
g
g
- easy to drive and to protect
Advantages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
100 V
l
l
l
Easy to mount
Space savings
High power density
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.5
5.0
± 100
25
250
V
nA
μ A
μ A
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
15
m ?
? 2006 IXYS All rights reserved
DS99132E(12/05)
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